(China (Mainland))
Product Summary
The FS150R12KT4 is an IGBT module.
Parametrics
FS150R12KT4 absolute maximum ratings: (1)collector-emitter voltage, VCES: 1200V; (2)DC-collector current, IC: 150A; (3)repetitive peak collector current, ICRM: 300A; (4)total power dissipation, Ptot: 750W; (5)gate-emitter peak voltage, VGES: ±20V.
Features
FS150R12KT4 features: (1)forward voltage, VF: 1.65 to 2.15V; (2)peak reverse recovery current, IRM: 220A; (3)recovered charge, Qr: 14.0μC; (4)reverse recovery energy, Erec: 700mJ; (5)thermal resistance, junction to case, RthJC: 0.375K/W.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 FS150R12KT4 |
Infineon Technologies |
IGBT Modules IGBT MODULE 1200V, 150A |
Data Sheet |
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FS150R12KT4_B11 |
Infineon Technologies |
IGBT Modules N-CH 1.2KV 150A |
Data Sheet |
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