Product Summary
The BSM150GB120DLC is a 62mm C-series IGBT module with low loss IGBT2 and EmCon diode.
Parametrics
BSM150GB120DLC absolute maximum ratings: (1)collector-emitter voltage:600V; (2)repetitive peak collector current:300A; (3)total power dissipation:1250W; (4)gate-emitter peak voltage:±20V; (5)DC-collector current:TC=80℃, Tvj=150℃:150A, TC=25℃, Tvj=150℃:300A.
Features
BSM150GB120DLC features: (1)gate threshold voltage:4.5V to 6.5V; (2)gate charge:1.60μC; (3)internal gate resistor:2.5Ω; (4)input capacitance:11.0nF; (5)reverse transfer capacitance:0.70nF; (6)collector-emitter cut-off current:5.0mA; (7)gate-emitter leakage current:400nA.
Diagrams

| Image | Part No | Mfg | Description |  | Pricing (USD) | Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|  |  BSM150GB120DLC |  Infineon Technologies |  IGBT Modules 1200V 150A DUAL |  Data Sheet |  
 |  | ||||||||||||
| Image | Part No | Mfg | Description |  | Pricing (USD) | Quantity | ||||||||||||
|  |  BSM100GAL120DLCK |  Infineon Technologies |  IGBT Modules 1200V 100A CHOPPER |  Data Sheet |  
 |  | ||||||||||||
|  |  BSM100GAL120DN2 |  Infineon Technologies |  IGBT Modules 1200V 100A CHOPPER |  Data Sheet |  Negotiable |  | ||||||||||||
|  |  BSM100GAR120DN2 |  Infineon Technologies |  IGBT Transistors 1200V 100A DUAL |  Data Sheet |  Negotiable |  | ||||||||||||
|  |  BSM100GB120DLC |  Infineon Technologies |  IGBT Modules 1200V 100A DUAL |  Data Sheet |  
 |  | ||||||||||||
|  |  BSM100GB120DLCK |  Infineon Technologies |  IGBT Modules 1200V 100A DUAL |  Data Sheet |  
 |  | ||||||||||||
|  |  BSM100GB120DN2 |  Infineon Technologies |  IGBT Modules 1200V 100A DUAL |  Data Sheet |  
 |  | ||||||||||||
 (China (Mainland))
 (China (Mainland)) 
                         
                        
 
                                    




