Product Summary

The BSM25GD120DN2E3224 is an IGBT Power Module.

Parametrics

BSM25GD120DN2E3224 absolute maximum ratings: (1)Collector-emitter voltage, VCE: 1200 V; (2)Collector-gate voltage RGE = 20 kW, VCGR: 1200V; (3)Gate-emitter voltage, VGE: ±20V; (4)DC collector current, IC: 35A when TC = 25℃; 25A when TC = 80℃; (5)Pulsed collector current, tp = 1 ms, ICpuls: 70A when TC = 25℃; 50A when TC = 80℃; (6)Power dissipation per IGBT TC = 25℃, Ptot: 200W; (7)Chip temperature, Tj: + 150℃; (8)Storage temperature, Tstg: -40 to +125℃; (9)Thermal resistance, chip case RthJC: ≤0.6 K/W; (10)Diode thermal resistance, chip case, RthJCD: ≤ 1K/W; (11)Insulation test voltage, t = 1min, Vis: 2500 Vac; (12)Creepage distance: 16 mm; (13)Clearance: 11mm; (14)DIN humidity category, DIN 40 040: F sec; (15)IEC climatic category, DIN IEC 68-1: 40/125/56 sec.

Features

BSM25GD120DN2E3224 features: (1)Power module; (2)3-phase full-bridge; (3)Including fast free-wheel diodes; (4)Package with insulated metal base plate.

Diagrams

BSM25GD120DN2E3224 diagram

Image Part No Mfg Description Data Sheet Download Pricing
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BSM25GD120DN2E3224
BSM25GD120DN2E3224

Infineon Technologies

IGBT Modules N-CH 1.2KV 35A

Data Sheet

0-1: $47.80
1-5: $45.41
5-10: $43.01
Image Part No Mfg Description Data Sheet Download Pricing
(USD)
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BSM200GA120D
BSM200GA120D

Other


Data Sheet

Negotiable 
BSM200GA120DLC
BSM200GA120DLC

Infineon Technologies

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Data Sheet

0-6: $74.68
6-10: $67.21
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Data Sheet

0-6: $74.68
6-10: $67.21
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BSM200GA120DN2

Infineon Technologies

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Data Sheet

0-1: $71.06
1-10: $63.95
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BSM200GA120DN2C

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Data Sheet

0-6: $72.00
6-10: $65.40
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Infineon Technologies

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Data Sheet

0-6: $72.00
6-10: $65.40