(China (Mainland))
Product Summary
The BSM50GB120DN2 is an IGBT power module. It includes fast free-wheeling diodes. Its VCE is 1200 V and IC is 78 A. Its package name is HALF-BRIDGE 1, which is with insulated metal base plate, and the ordering code of BSM50GB120DN2 is C67076-A2105-A70. Its turn-on delay time is 44 ns typical and 100 ns max when VCC=600V, VCE=15V, IC=50A, and RGon=22Ω, while the turn-off delay time is 380 ns typical and 500 ns max.
Parametrics
BSM50GB120DN2 absolute maximum ratings: (1)Collector-emitter voltage: 1200 V; (2)Collector-gate voltage: 1200 V; (3)Gate-emitter voltage: ± 20 V; (4)DC collector current: 78 A at TC = 25 ℃, 50 A at TC = 80 ℃; (5)Pulsed collector current, tp = 1 ms: 156 A at TC = 25 ℃, 100 A at TC = 80℃; (6)Power dissipation per IGBT: 400 W at TC = 25 ℃; (7)Chip temperature: + 150 ℃; (8)Storage temperature: -55 to + 150 ℃.
Features
BSM50GB120DN2 features: (1)Half-bridge; (2)Including fast free-wheeling diodes; (3)Package with insulated metal base plate.
Diagrams
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 BSM50GB120DN2 |
Infineon Technologies |
IGBT Modules 1200V 50A DUAL |
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